Samsung announced that is has started mass production of the new 9th generation vertical NAND (V-NAND) memory chips. They have 50% higher bit density than 8th generation products.
Additionally, the 9th gen products support a new NAND flash interface called “Toggle 5.1” that enables data transfer speeds of up to 3.2Gbps, this is 33% higher than previous generations. To top it all off, the new chips are 10% more power efficient.
A lot of work went into the 9th generation of V-NAND. Samsung used new innovations like cell interference avoidance and cell life extension. Also, the company…